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Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp. Customer Support Dept. April 1, 2003
Cautions
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
2SK2728
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-454B (Z) 3rd. Edition Jul. 1997 Features
* * * * Low on-resistance High speed switching Low drive current Avalanche ratings
Outline
TO-3P
D
G
1
S
2
3
1. Gate 2. Drain (Flange) 3. Source
2SK2728
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Symbol VDSS VGSS ID I D(pulse)* I DR I AP *
3 3 2 1
Ratings 500 30 18 72 18 18 18 150 150 -55 to +150
Unit V V A A A A mJ W C C
EAR*
Pch* Tch Tstg
2SK2728
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 500 30 -- -- 2.5 -- 8 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.38 13 2150 630 100 38 10 13 35 120 100 65 1.0 380 Max -- -- 10 10 3.5 0.45 -- -- -- -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF nc nc nc ns ns ns ns V ns I D = 18A, VGS = 0 I F = 18A, VGS = 0 diF/ dt = 100A/s Test Conditions I D = 10mA, VGS = 0 I G = 100A, VDS = 0 VGS = 25V, VDS = 0 VDS = 500 V, VGS = 0 I D = 1mA, VDS = 10V*1 I D = 9A, VGS = 10V*1 I D = 9A, VDS = 10V*1 VDS = 10V VGS = 0 f = 1MHz VDD = 400V VGS = 10V I D = 18A VGS = 10V, ID = 9A RL = 3.3
Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance |yfs| Ciss Coss
Reverse transfer capacitance Crss Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr
2SK2728
Main Characteristics
Power vs. Temperature Derating 200 Pch (W) Maximum Safe Operation Area
1000 I D (A) 300 100 30 10 3 1 0.3 0.1
150
10
10
PW
DC Op er
Channel Dissipation
Drain Current
100
=
1m
10 m s( 1s
0
s
s
s
50
Operation in this area is limited by R DS(on) Ta = 25 C 1
at
ion
(T
ho
c=
t)
25
C
)
0
50
100
150 Tc (C)
200
Case Temperature
30 3 10 100 300 1000 Drain to Source Voltage V DS (V)
Typical Output Characteristics 25 10 V 8V 25 6V Pulse Test 5.5 V 15 (A) 20
Typical Transfer Characteristics V DS = 10 V Pulse Test
I D (A)
20
ID Drain Current 5V
15
Drain Current
10
10 Tc = 75C
25C
5 4.5 V VGS = 4 V 0 10 20 30 Drain to Source Voltage 40 50 V DS (V)
5
-25C 2 4 6 Gate to Source Voltage 8 10 V GS (V)
0
2SK2728
Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( ) 20 Static Drain to Source on State Resistance vs. Drain Current 2 Pulse Test 1 VGS = 10 V, 15 V
16
12 I D = 18 A 8 10 A 5A 0 12 4 8 Gate to Source Voltage 16 20 V GS (V)
0.5
4
0.2
0.1 1 2 5 10 20 50 Drain Current I D (A) 100
Static Drain to Source on State Resistance R DS(on) ( )
Forward Transfer Admittance |y fs | (S)
Static Drain to Source on State Resistance vs. Temperature 2.0 Pulse Test 1.6 I D = 18 A
Forward Transfer Admittance vs. Drain Current 50 20 10 5 2 1 0.5 0.2 0.1 0.1 0.2 V DS = 10 V Pulse Test 2 0.5 1 5 10 20 Drain Current I D (A) 50 75 C 25 C Tc = -25 C
1.2
0.8 V GS = 10 V 0.4 0 -40 5A 10 A
0 40 80 120 160 Case Temperature Tc (C)
2SK2728
Body to Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) 500 200 100 50
5000 2000
Typical Capacitance vs. Drain to Source Voltage Ciss
Capacitance C (pF)
1000 500
Coss
200 100 50 20 10 5
20 10 0.1
di / dt = 100 A / s V GS = 0, Ta = 25 C 0.3 1 3 10 30 100 Reverse Drain Current I DR (A)
VGS = 0 f = 1 MHz 0 10 20 30
Crss 40 50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics V DS (V) V GS (V) 500 VDS VGS V DD = 100 V 250 V 400 V 20
1000
Switching Characteristics
Switching Time t (ns)
400
16
V GS = 10 V, V DD = 30 V 500 PW = 10 s, duty < 1 %
Drain to Source Voltage
300
12
Gate to Source Voltage
200 t d(off) 100 50 t d(on) 20 10 0.1 tf tr
200 V DD = 400 V 250 V 100 V
8
100
I D = 18 A
4
0
20 40 60 80 Gate Charge Qg (nc)
0 100
0.3
1 3 Drain Current
10 30 I D (A)
100
2SK2728
Reverse Drain Current vs. Source to Drain Voltage 25 Reverse Drain Current I DR (A) Repetive Avalanche Energy E AR (mJ) 25 I AP = 18 A V DD = 50 V duty < 0.1 % Rg > 50 Maximun Avalanche Energy vs. Channel Temperature Derating
20 5, 10 V 15 V GS = 0 V
20
15
10
10
5 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V)
5 0 25
50
75
100
125
150
Channel Temperature Tch (C)
Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5
0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 0.83 C/W, Tc = 25 C
PDM PW T
0.03
0.02 1 lse 0.0 t pu ho 1s
D=
PW T
0.01 10
100
1m
10 m Pulse Width
100 m PW (S)
1
10
2SK2728
Avalanche Test Circuit EAR = Avalanche Waveform 1 2 * L * I AP * 2 VDSS VDSS - V DD
V DS Monitor
L I AP Monitor
V (BR)DSS I AP VDD ID V DS
Rg Vin 15 V
D. U. T
50 0 VDD
Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout Monitor
Switching Time Waveform 90% 10% 10% 90% td(on) tr 90% td(off) tf 10%
Vout
2SK2728
Package Dimensions As of January, 2001
5.0 0.3 15.6 0.3 1.0
3.2 0.2
4.8 0.2 1.5
Unit: mm
0.5
14.9 0.2
19.9 0.2
1.6 1.4 Max 2.0 2.8 18.0 0.5
1.0 0.2
2.0
0.6 0.2
3.6
0.9 1.0
5.45 0.5
5.45 0.5
Hitachi Code JEDEC EIAJ Mass (reference value) TO-3P -- Conforms 5.0 g
0.3
2SK2728
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica Europe Asia Japan
: : : :
http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm
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For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright (c) Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
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